samsung set to mass produce world's fastest DRAM

The new DRAM solution will allow faster

responsiveness for high performance computing,

advanced graphics and network systems as well.

SEOUL: Samsung Electronics said on Tuesday that it has begun mass-producing the world's fastest 4- gigabyte high bandwidth memory (HBM) dynamic random access memory (DRAM) chip, which is more than seven times faster than the previous fastest DRAM.

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The 4GB DRAM package is based on the second- generation HBM (HBM2) interface, which can transmit data at a speed more than seven times faster than the current DRAM performance limit, Xinhua reported.

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The new DRAM solution will allow faster responsiveness for high performance computing, advanced graphics and network systems as well as enterprise servers, the company said in a statement.

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The 4GB HBM2 package uses the Through Silicon Via (TSV) technology, which vertically interconnects a buffer die at the bottom and four 8-gigabit (Gb) core dies on top through thousands of TSV holes.

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It offers an improvement in data transmission speed compared with the typical wire-bonding package technology.

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The new memory chip, which uses the 20-nanometre process technology, satisfies the need for high performance, energy efficiency and reliability, the

company said.

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Samsung said that it plans to produce an 8GB HBM2 DRAM package within this year to specify it in graphics card, vowing to expand its line-up of HBM2 DRAM

solutions.